IPB110N20N3LFATMA1

Teknik Özellikler

Vgsth Max Id

4.2V @ 260μA

Drain To Source Voltage Vdss

200V

Seri

OptiMOS™ 3

Yayın Yılı

2013

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

250W Tc

Jesd30 Code

R-PSSO-G2

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

650pF @ 100V

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

76nC @ 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

11A

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

352A

Rds On Max Id Vgs

11m Ω @ 88A, 10V

Current Continuous Drain Id25

88A Tc

Ds Breakdown Voltagemin

200V

Fabrika Tedarik Süresi

13 Weeks

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.011Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

560 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±20V

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Active