IPB100N04S4H2ATMA1

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

7180pF @ 25V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

90nC @ 10V

Turn Off Delay Time

19 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

115W Tc

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

4V @ 70μA

Yayın Yılı

2012

Seri

OptiMOS™

Current Continuous Drain Id25

100A Tc

Rds On Max Id Vgs

2.4m Ω @ 100A, 10V

Rise Time

13ns

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

100A

Pin Sayısı

3

Pulsed Drain Currentmax Idm

400A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Halogen Free

Halogen Free

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0024Ohm

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

16 Weeks

Fall Time Typ

21 ns

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Max Dual Supply Voltage

40V

Montaj Tipi

Surface Mount