IPB090N06N3GATMA1

Teknik Özellikler

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.009Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

13 Weeks

Fall Time Typ

5 ns

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

60V

Rds On Max Id Vgs

9m Ω @ 50A, 10V

Current Continuous Drain Id25

50A Tc

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

200A

Pin Sayısı

4

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn Off Delay Time

20 ns

Gate Charge Qg Max Vgs

36nC @ 10V

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Seri

OptiMOS™

Vgsth Max Id

4V @ 34μA

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Turn On Delay Time

15 ns

Power Dissipation

71W

Additional Feature

AVALANCHE RATED

Kurşunsuz Kodu

no

Rise Time

40ns

Montaj

Surface Mount

Pin Sayısı

3

Continuous Drain Current Id

50A

Operating Mode

ENHANCEMENT MODE