IPB083N10N3GATMA1

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Fabrika Tedarik Süresi

13 Weeks

Fall Time Typ

8 ns

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn Off Delay Time

31 ns

Gate Charge Qg Max Vgs

55nC @ 10V

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

3.5V @ 75μA

Seri

OptiMOS™

Transistor Application

SWITCHING

Current Continuous Drain Id25

80A Tc

Rds On Max Id Vgs

8.3m Ω @ 73A, 10V

Qualification Status

Not Qualified

Pin Sayısı

4

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation

125W

Halogen Free

Halogen Free

Max Dual Supply Voltage

100V

Drive Voltage Max Rds On Min Rds On

6V 10V

Turn On Delay Time

18 ns

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

3980pF @ 50V

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Tin (Sn)