IPB080N03LGATMA1

Teknik Özellikler

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Vgs Max

±20V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Fall Time Typ

2.8 ns

Transistor Application

SWITCHING

Current Continuous Drain Id25

50A Tc

Rds On Max Id Vgs

8m Ω @ 30A, 10V

Qualification Status

Not Qualified

Pin Sayısı

4

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge Qg Max Vgs

18nC @ 10V

Turn Off Delay Time

18 ns

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

2.2V @ 250μA

Seri

OptiMOS™

Max Dual Supply Voltage

30V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Avalanche Energy Rating Eas

50 mJ

Turn On Delay Time

4.6 ns

Case Connection

DRAIN

Power Dissipation

47W

Halogen Free

Halogen Free

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Montaj

Surface Mount

Rise Time

3.6ns

Kurşunsuz Kodu

no

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

50A

Pin Sayısı

3

Drain Currentmax Abs Id

48A