IPB065N15N3GATMA1

Teknik Özellikler

Pin Sayısı

3

Pulsed Drain Currentmax Idm

520A

Current Continuous Drain Id25

130A Tc

Rds On Max Id Vgs

6.5m Ω @ 100A, 10V

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

93nC @ 10V

Turn Off Delay Time

46 ns

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Vgsth Max Id

4V @ 270μA

Seri

OptiMOS™

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G6

REACH Uyumluluk Kodu

not_compliant

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Fet Type

N-Channel

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0065Ohm

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

14 ns

Fabrika Tedarik Süresi

13 Weeks

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

7

Continuous Drain Current Id

130A

Montaj

Surface Mount

Rise Time

35ns

Kurşunsuz Kodu

no

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

7300pF @ 75V

Terminal Formu

GULL WING

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ