IPB065N10N3GATMA1

Teknik Özellikler

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Max Dual Supply Voltage

100V

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

160 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

6V 10V

Turn On Delay Time

19 ns

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Halogen Free

Halogen Free

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Drainsource On Resistancemax

0.0065Ohm

Fabrika Tedarik Süresi

13 Weeks

Fall Time Typ

9 ns

Transistor Application

SWITCHING

Current Continuous Drain Id25

80A Tc

Montaj

Surface Mount

Rds On Max Id Vgs

6.5m Ω @ 80A, 10V

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

80A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

4910pF @ 50V

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

37 ns

Gate Charge Qg Max Vgs

64nC @ 10V

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)