IPB054N08N3GATMA1

Teknik Özellikler

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Drainsource On Resistancemax

0.0054Ohm

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

10 ns

Fabrika Tedarik Süresi

13 Weeks

Pin Sayısı

4

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Rds On Max Id Vgs

5.4m Ω @ 80A, 10V

Current Continuous Drain Id25

80A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

69nC @ 10V

Turn Off Delay Time

38 ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Seri

OptiMOS™

Vgsth Max Id

3.5V @ 90μA

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Max Dual Supply Voltage

80V

Case Connection

DRAIN

Turn On Delay Time

18 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Power Dissipation

150W

Halogen Free

Halogen Free

Continuous Drain Current Id

80A

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

no

Rise Time

66ns

Montaj

Surface Mount