IPB049NE7N3GATMA1

Teknik Özellikler

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Fet Type

N-Channel

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0049Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

8 ns

Fabrika Tedarik Süresi

13 Weeks

Pin Sayısı

4

Current Continuous Drain Id25

80A Tc

Rds On Max Id Vgs

4.9m Ω @ 80A, 10V

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

75V

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn Off Delay Time

30 ns

Gate Charge Qg Max Vgs

68nC @ 10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgsth Max Id

3.8V @ 91μA

Seri

OptiMOS™

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

14 ns

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

150W

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

80A

Pin Sayısı

3

Rise Time

11ns

Montaj

Surface Mount

Kurşunsuz Kodu

no

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING