IPB048N15N5LFATMA1

Teknik Özellikler

Drain Currentmax Abs Id

120A

Feedback Capmax Crss

23 pF

Transistor Application

SWITCHING

Current Continuous Drain Id25

120A

Rds On Max Id Vgs

4.8m Ω @ 100A, 10V

Ds Breakdown Voltagemin

150V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

480A

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

313W Tc

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

4.9V @ 255μA

Drain To Source Voltage Vdss

150V

Seri

OptiMOS™-5

Yayın Yılı

2013

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

380pF @ 75V

Terminal Formu

GULL WING

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

84nC @ 10V

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

30 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Active

Vgs Max

±20V

Fabrika Tedarik Süresi

13 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99