IPB036N12N3GATMA1

Teknik Özellikler

Vgsth Max Id

4V @ 270μA

Seri

OptiMOS™

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G6

REACH Uyumluluk Kodu

not_compliant

Drain To Source Breakdown Voltage

120V

Turn Off Delay Time

76 ns

Gate Charge Qg Max Vgs

211nC @ 10V

Number Of Channels

1

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pin Sayısı

4

Rds On Max Id Vgs

3.6m Ω @ 100A, 10V

Current Continuous Drain Id25

180A Tc

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Fall Time Typ

21 ns

Fabrika Tedarik Süresi

13 Weeks

ECCN Kodu

EAR99

Kurşunsuz

Contains Lead

Drainsource On Resistancemax

0.0036Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Threshold Voltage

3V

Yayın Yılı

2008

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

300W Tc

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

13800pF @ 60V

Terminal Kaplaması

Tin (Sn)

Max Junction Temperature Tj

175°C