IPB035N08N3GATMA1

Teknik Özellikler

Kurşunsuz

Contains Lead

Drainsource On Resistancemax

0.0035Ohm

Halogen Free

Halogen Free

ECCN Kodu

EAR99

Power Dissipation

214W

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

14 ns

Fabrika Tedarik Süresi

13 Weeks

Max Dual Supply Voltage

80V

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Case Connection

DRAIN

Turn On Delay Time

23 ns

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

6V 10V

Montaj Tipi

Surface Mount

Turn Off Delay Time

45 ns

Gate Charge Qg Max Vgs

117nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

8110pF @ 40V

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2008

Seri

OptiMOS™

Vgsth Max Id

3.5V @ 155μA

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

214W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Continuous Drain Current Id

100A

Pulsed Drain Currentmax Idm

400A

Operating Mode

ENHANCEMENT MODE