IPB031NE7N3GATMA1

Teknik Özellikler

Drain To Source Voltage Vdss

75V

Yayın Yılı

2008

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

214W Tc

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

8130pF @ 37.5V

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

100A

Rise Time

85ns

Montaj

Surface Mount

Kurşunsuz Kodu

no

Power Dissipation

214W

Turn On Delay Time

16 ns

Case Connection

DRAIN

Avalanche Energy Rating Eas

640 mJ

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

3.8V @ 155μA

Seri

OptiMOS™

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Turn Off Delay Time

40 ns

Gate Charge Qg Max Vgs

117nC @ 10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pin Sayısı

4

Pulsed Drain Currentmax Idm

400A

Rds On Max Id Vgs

3.1m Ω @ 100A, 10V

Current Continuous Drain Id25

100A Tc

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

75V

Qualification Status

Not Qualified