IPB027N10N3GATMA1

Teknik Özellikler

Halogen Free

Halogen Free

Power Dissipation

300W

Max Dual Supply Voltage

100V

Drive Voltage Max Rds On Min Rds On

6V 10V

Case Connection

DRAIN

Turn On Delay Time

34 ns

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

14800pF @ 50V

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

300W Tc

JESD-609 Kodu

e3

Yayın Yılı

2008

Kurşunsuz Kodu

no

Rise Time

58ns

Montaj

Surface Mount

Continuous Drain Current Id

120A

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0027Ohm

Kurşunsuz

Contains Lead

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

13 Weeks

Fall Time Typ

28 ns

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn Off Delay Time

84 ns

Gate Charge Qg Max Vgs

206nC @ 10V

Jesd30 Code

R-PSSO-G2

Ambalaj

Tape & Reel (TR)

Number Of Elements

1