IPB025N10N3GATMA1

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

300W

ECCN Kodu

EAR99

Halogen Free

Halogen Free

Drainsource On Resistancemax

0.0025Ohm

Kurşunsuz

Contains Lead

Fabrika Tedarik Süresi

13 Weeks

Fall Time Typ

28 ns

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Max Dual Supply Voltage

100V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

6V 10V

Turn On Delay Time

34 ns

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab)

Terminal Sayısı

6

Input Capacitance Ciss Max Vds

14800pF @ 50V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

206nC @ 10V

Turn Off Delay Time

84 ns

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PSSO-G6

Vgsth Max Id

3.5V @ 275μA

Seri

OptiMOS™

Yayın Yılı

2008

Transistor Application

SWITCHING

Montaj

Surface Mount

Rise Time

58ns