IPB025N08N3GATMA1

Teknik Özellikler

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Drainsource On Resistancemax

0.0025Ohm

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

33 ns

Fabrika Tedarik Süresi

13 Weeks

Pulsed Drain Currentmax Idm

480A

Pin Sayısı

4

Qualification Status

Not Qualified

Current Continuous Drain Id25

120A Tc

Rds On Max Id Vgs

2.5m Ω @ 100A, 10V

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

206nC @ 10V

Turn Off Delay Time

86 ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Seri

OptiMOS™

Vgsth Max Id

3.5V @ 270μA

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Max Dual Supply Voltage

80V

Case Connection

DRAIN

Turn On Delay Time

28 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Halogen Free

Halogen Free

Power Dissipation

300W

Pin Sayısı

3

Continuous Drain Current Id

120A

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

no

Montaj

Surface Mount