IPB020NE7N3GATMA1

Teknik Özellikler

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Fall Time Typ

22 ns

Fabrika Tedarik Süresi

13 Weeks

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.002Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pin Sayısı

4

Pulsed Drain Currentmax Idm

480A

Rds On Max Id Vgs

2m Ω @ 100A, 10V

Current Continuous Drain Id25

120A Tc

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

75V

Vgsth Max Id

3.8V @ 273μA

Seri

OptiMOS™

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Turn Off Delay Time

70 ns

Gate Charge Qg Max Vgs

206nC @ 10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time

19 ns

Case Connection

DRAIN

Avalanche Energy Rating Eas

1100 mJ

Drive Voltage Max Rds On Min Rds On

10V

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

120A

Pin Sayısı

3

Rise Time

26ns

Montaj

Surface Mount

Kurşunsuz Kodu

no

Drain To Source Voltage Vdss

75V