IPB019N06L3GATMA1

Teknik Özellikler

Fabrika Tedarik Süresi

13 Weeks

Fall Time Typ

38 ns

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Manufacturer Package Identifier

PG-TO-263-3

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

2.2V @ 196μA

Seri

OptiMOS™

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain To Source Breakdown Voltage

60V

Turn Off Delay Time

131 ns

Gate Charge Qg Max Vgs

166nC @ 4.5V

Number Of Channels

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

120A Tc

Rds On Max Id Vgs

1.9m Ω @ 100A, 10V

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Pin Sayısı

4

Pulsed Drain Currentmax Idm

480A

Additional Feature

LOGIC LEVEL COMPATIBLE

Halogen Free

Halogen Free

Power Dissipation

250W

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Turn On Delay Time

35 ns

Yükseklik

4.57mm

Case Connection

DRAIN

Max Dual Supply Voltage

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)