IPB017N10N5ATMA1

Teknik Özellikler

Power Dissipation

375W

Halogen Free

Halogen Free

Max Dual Supply Voltage

100V

Case Connection

DRAIN

Yükseklik

4.5mm

Turn On Delay Time

33 ns

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

6V 10V

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

15600pF @ 50V

Gate To Source Voltage Vgs

20V

Terminal Sayısı

6

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Max Junction Temperature Tj

175°C

Weight

1.59999g

Yayın Yılı

2004

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

375W Tc

Continuous Drain Current Id

273A

Pin Sayısı

7

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Rise Time

23ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

ECCN Kodu

EAR99

Fall Time Typ

27 ns

Fabrika Tedarik Süresi

13 Weeks

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Number Of Channels

1

Gate Charge Qg Max Vgs

210nC @ 10V

Turn Off Delay Time

80 ns

Drain To Source Breakdown Voltage

100V