IPB017N06N3GATMA1

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Fabrika Tedarik Süresi

13 Weeks

Fall Time Typ

24 ns

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab)

Gate Charge Qg Max Vgs

275nC @ 10V

Turn Off Delay Time

79 ns

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G6

Vgsth Max Id

4V @ 196μA

Seri

OptiMOS™

Transistor Application

SWITCHING

Rds On Max Id Vgs

1.7m Ω @ 100A, 10V

Current Continuous Drain Id25

180A Tc

Qualification Status

Not Qualified

Pin Sayısı

7

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation

250W

Halogen Free

Halogen Free

Max Dual Supply Voltage

60V

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

634 mJ

Turn On Delay Time

41 ns

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

6

Input Capacitance Ciss Max Vds

23000pF @ 30V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V