IPB015N08N5ATMA1

Teknik Özellikler

Halogen Free

Halogen Free

Power Dissipation

375W

Max Dual Supply Voltage

80V

Yükseklik

4.5mm

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

33 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

16900pF @ 40V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

6

Max Junction Temperature Tj

175°C

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2013

Weight

1.59999g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

375W Tc

Continuous Drain Current Id

180A

Pin Sayısı

7

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Montaj

Surface Mount

Rise Time

32ns

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Fall Time Typ

28 ns

Fabrika Tedarik Süresi

13 Weeks

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Turn Off Delay Time

83 ns

Gate Charge Qg Max Vgs

222nC @ 10V

Number Of Channels

1

Drain To Source Breakdown Voltage

80V

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab)