IPAN80R450P7XKSA1

Teknik Özellikler

Fabrika Tedarik Süresi

18 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Drainsource On Resistancemax

0.45Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

29 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

ISOLATED

Yüzey Montaj

NO

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

29W Tc

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSFM-T3

Vgsth Max Id

3.5V @ 220μA

Drain To Source Voltage Vdss

800V

Yayın Yılı

2013

Seri

CoolMOS™ P7

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

770pF @ 500V

Gate Charge Qg Max Vgs

24nC @ 10V

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

450m Ω @ 4.5A, 10V

Current Continuous Drain Id25

11A Tc

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

800V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

29A