IPAN80R360P7XKSA1

Teknik Özellikler

Fabrika Tedarik Süresi

18 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.36Ohm

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

34 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

ISOLATED

Transistor Element Material

SILICON

Yüzey Montaj

NO

Parça Durumu

Active

Vgs Max

±20V

Number Of Elements

1

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Nem Hassasiyeti (MSL)

Not Applicable

Power Dissipation Max

30W Tc

Jesd30 Code

R-PSFM-T3

Drain To Source Voltage Vdss

800V

Vgsth Max Id

3.5V @ 280μA

Seri

CoolMOS™ P7

Yayın Yılı

2013

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

930pF @ 500V

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

30nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Rds On Max Id Vgs

360m Ω @ 5.6A, 10V

Current Continuous Drain Id25

13A Tc

Ds Breakdown Voltagemin

800V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

34A