IPA80R1K2P7XKSA1

Teknik Özellikler

Parça Durumu

Active

Yüzey Montaj

NO

Transistor Element Material

SILICON

Vgs Max

±20V

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

10 mJ

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Case Connection

ISOLATED

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

18 Weeks

Current Continuous Drain Id25

4.5A Tc

Rds On Max Id Vgs

1.2 Ω @ 1.7A, 10V

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

800V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

11A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3 Full Pack

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

300pF @ 500V

Gate Charge Qg Max Vgs

11nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

25W Tc

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Number Of Elements

1

Jesd30 Code

R-PSFM-T3

Drain To Source Voltage Vdss

800V

Vgsth Max Id

3.5V @ 80μA

Yayın Yılı

2014

Seri

CoolMOS™ P7