IPA65R1K0CEXKSA1

Teknik Özellikler

Rds On Max Id Vgs

1 Ω @ 1.5A, 10V

Seri

CoolMOS™

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Vgs Max

±20V

Avalanche Energy Rating Eas

50 mJ

Ambalaj

Tube

Power Dissipation Max

68W Tc

Fet Feature

Super Junction

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

Current Continuous Drain Id25

7.2A Tc

Input Capacitance Ciss Max Vds

328pF @ 100V

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

3.5V @ 200μA

Halogen Free

Halogen Free

Pulsed Drain Currentmax Idm

12A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Montaj

Through Hole

Yayın Yılı

2016

Drainsource On Resistancemax

1Ohm

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Fet Type

N-Channel

ECCN Kodu

EAR99

Case Connection

ISOLATED

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

15.3nC @ 10V

Continuous Drain Current Id

7.2A

Kılıf / Paket

TO-220-3 Full Pack

Operating Mode

ENHANCEMENT MODE