IPA65R125C7XKSA1

Teknik Özellikler

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Turn On Delay Time

14 ns

Avalanche Energy Rating Eas

89 mJ

Transistor Application

SWITCHING

Rds On Max Id Vgs

125m Ω @ 8.9A, 10V

Seri

CoolMOS™ C7

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

32W Tc

Ambalaj

Tube

Pin Sayısı

3

Transistor Element Material

SILICON

Current Continuous Drain Id25

10A Tc

Input Capacitance Ciss Max Vds

1670pF @ 400V

Turn Off Delay Time

71 ns

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Vgsth Max Id

4V @ 440μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

75A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Halogen Free

Halogen Free

Number Of Elements

1

Montaj

Through Hole

Fet Type

N-Channel

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.125Ohm

Fall Time Typ

8 ns

Yayın Yılı

2008

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Parça Durumu

Active

Max Dual Supply Voltage

650V

Continuous Drain Current Id

10A

Gate To Source Voltage Vgs

20V