IPA65R110CFDXKSA1

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

34.7W Tc

Element Configuration

Single

Contact Plating

Tin

Ambalaj

Tube

Vgs Max

±20V

Avalanche Energy Rating Eas

845 mJ

Transistor Application

SWITCHING

Rds On Max Id Vgs

110m Ω @ 12.7A, 10V

Seri

CoolMOS™

Çalışma Sıcaklığı

-55°C~150°C TJ

Qualification Status

Not Qualified

Vgsth Max Id

4.5V @ 1.3mA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz Kodu

yes

Pin Sayısı

3

Transistor Element Material

SILICON

Current Continuous Drain Id25

31.2A Tc

Input Capacitance Ciss Max Vds

3240pF @ 100V

Turn Off Delay Time

68 ns

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

99.6A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Halogen Free

Halogen Free

Pin Sayısı

3

Parça Durumu

Active

Continuous Drain Current Id

31.2A

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

650V

Kılıf / Paket

TO-220-3 Full Pack

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

118nC @ 10V

Rise Time

11ns

Case Connection

ISOLATED

Fet Type

N-Channel