IPA60R600P7SXKSA1

Teknik Özellikler

Ds Breakdown Voltagemin

600V

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

16A

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

600V

Kılıf / Paket

TO-220-3 Full Pack

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Active

Case Connection

ISOLATED

Gate Charge Qg Max Vgs

9nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fet Type

N-Channel

Yayın Yılı

2014

Yüzey Montaj

NO

Drainsource On Resistancemax

0.6Ohm

Nem Hassasiyeti (MSL)

Not Applicable

Ambalaj

Tube

Power Dissipation Max

21W Tc

Avalanche Energy Rating Eas

17 mJ

Terminal Pozisyonu

SINGLE

Vgs Max

±20V

Çalışma Sıcaklığı

-40°C~150°C TJ

Seri

CoolMOS™ P7

Rds On Max Id Vgs

600m Ω @ 1.7A, 10V

Transistor Application

SWITCHING

Vgsth Max Id

4V @ 80μA

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Current Continuous Drain Id25

6A Tc

Input Capacitance Ciss Max Vds

363pF @ 400V