IPA60R180P7XKSA1

Teknik Özellikler

Power Dissipation Max

26W Tc

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

CoolMOS™ P7

Rds On Max Id Vgs

180m Ω @ 5.6A, 10V

Avalanche Energy Rating Eas

56 mJ

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Vgsth Max Id

4V @ 280μA

Input Capacitance Ciss Max Vds

1081pF @ 400V

Current Continuous Drain Id25

18A Tc

Transistor Element Material

SILICON

Kurşunsuz Kodu

yes

Jesd30 Code

R-PSFM-T3

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Ds Breakdown Voltagemin

600V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

53A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge Qg Max Vgs

25nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

Case Connection

ISOLATED

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-220-3 Full Pack

Drain To Source Voltage Vdss

650V

Yüzey Montaj

NO

Drainsource On Resistancemax

0.18Ohm

Yayın Yılı

2014

ECCN Kodu

EAR99

Fet Type

N-Channel

JESD-609 Kodu

e3