IPA60R180C7XKSA1

Teknik Özellikler

Power Dissipation Max

29W Tc

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

180m Ω @ 5.3A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

CoolMOS™ C7

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

53 mJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Vgsth Max Id

4V @ 260μA

Input Capacitance Ciss Max Vds

1080pF @ 400V

Current Continuous Drain Id25

9A Tc

Transistor Element Material

SILICON

Kurşunsuz Kodu

yes

Jesd30 Code

R-PSFM-T3

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Montaj

Through Hole

Pulsed Drain Currentmax Idm

45A

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Halogen Free

Halogen Free

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

24nC @ 10V

Case Connection

ISOLATED

Drain Currentmax Abs Id

9A

Parça Durumu

Active

Kurşunsuz

Lead Free

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

600V

Continuous Drain Current Id

9A

Kılıf / Paket

TO-220-3 Full Pack

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.18Ohm

Yayın Yılı

2008