IPA60R125C6XKSA1

Teknik Özellikler

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

89A

Pin Sayısı

3

Halogen Free

Halogen Free

Montaj

Through Hole

Number Of Elements

1

Fall Time Typ

7 ns

Yayın Yılı

2006

Fet Type

N-Channel

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

Rise Time

12ns

Power Dissipation

34W

Gate Charge Qg Max Vgs

96nC @ 10V

Fabrika Tedarik Süresi

12 Weeks

Case Connection

ISOLATED

Max Dual Supply Voltage

600V

Radyasyon Dayanımı

No

Parça Durumu

Not For New Designs

Kurşunsuz

Lead Free

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

30A

Kılıf / Paket

TO-220-3 Full Pack

Gate To Source Voltage Vgs

20V

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

CoolMOS™

Rds On Max Id Vgs

125m Ω @ 14.5A, 10V

Turn On Delay Time

15 ns

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Power Dissipation Max

34W Tc

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

2127pF @ 100V

Current Continuous Drain Id25

30A Tc

Transistor Element Material

SILICON

Pin Sayısı

3