IPA60R120C7XKSA1

Teknik Özellikler

Power Dissipation Max

32W Tc

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

120m Ω @ 7.8A, 10V

Seri

CoolMOS™ C7

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Pozisyonu

SINGLE

Vgs Max

±20V

Avalanche Energy Rating Eas

78 mJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

4V @ 390μA

Kurşunsuz Kodu

yes

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Current Continuous Drain Id25

11A Tc

Input Capacitance Ciss Max Vds

1500pF @ 400V

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Montaj

Through Hole

Pulsed Drain Currentmax Idm

66A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Halogen Free

Halogen Free

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

34nC @ 10V

Case Connection

ISOLATED

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Active

Kurşunsuz

Lead Free

Max Dual Supply Voltage

600V

Continuous Drain Current Id

11A

Kılıf / Paket

TO-220-3 Full Pack

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.12Ohm

Yayın Yılı

2008

Fet Type

N-Channel

Jedec95 Code

TO-220AB