IPA60R099P7XKSA1

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

100A

Ds Breakdown Voltagemin

600V

Number Of Elements

1

ECCN Kodu

EAR99

Fet Type

N-Channel

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

Yüzey Montaj

NO

Drainsource On Resistancemax

0.099Ohm

Yayın Yılı

2014

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

600V

Kılıf / Paket

TO-220-3 Full Pack

Gate Charge Qg Max Vgs

45nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

Case Connection

ISOLATED

Avalanche Energy Rating Eas

105 mJ

Terminal Pozisyonu

SINGLE

Vgs Max

±20V

Transistor Application

SWITCHING

Seri

CoolMOS™ P7

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

99m Ω @ 10.5A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

29W Tc

Ambalaj

Tube

Input Capacitance Ciss Max Vds

1952pF @ 400V

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Current Continuous Drain Id25

31A Tc

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Vgsth Max Id

4V @ 530μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)