IPA60R099C7XKSA1

Teknik Özellikler

Transistor Application

SWITCHING

Rds On Max Id Vgs

99m Ω @ 9.7A, 10V

Seri

CoolMOS™ C7

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

97 mJ

Power Dissipation Max

33W Tc

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

12A Tc

Transistor Element Material

SILICON

Jesd30 Code

R-PSFM-T3

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

1819pF @ 400V

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Vgsth Max Id

4V @ 490μA

Pulsed Drain Currentmax Idm

83A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Halogen Free

Halogen Free

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Montaj

Through Hole

Drainsource On Resistancemax

0.099Ohm

Yayın Yılı

2015

Fet Type

N-Channel

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

42nC @ 10V

Case Connection

ISOLATED

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Parça Durumu

Active

Max Dual Supply Voltage

600V

Continuous Drain Current Id

12A