IPA60R080P7XKSA1

Teknik Özellikler

Input Capacitance Ciss Max Vds

2180pF @ 400V

Current Continuous Drain Id25

37A Tc

Transistor Element Material

SILICON

Jesd30 Code

R-PSFM-T3

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4V @ 590μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Vgs Max

±20V

Avalanche Energy Rating Eas

118 mJ

Transistor Application

SWITCHING

Rds On Max Id Vgs

80m Ω @ 11.8A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

CoolMOS™ P7

Nem Hassasiyeti (MSL)

Not Applicable

Power Dissipation Max

29W Tc

Ambalaj

Tube

Fet Type

N-Channel

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Yüzey Montaj

NO

Drainsource On Resistancemax

0.08Ohm

Yayın Yılı

2014

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

TO-220-3 Full Pack

Drain To Source Voltage Vdss

600V

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

51nC @ 10V

Case Connection

ISOLATED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

110A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Ds Breakdown Voltagemin

600V

Number Of Elements

1