IPA105N15N3GXKSA1

Teknik Özellikler

Vgsth Max Id

4V @ 160μA

Qualification Status

Not Qualified

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

35 ns

Input Capacitance Ciss Max Vds

4300pF @ 75V

Current Continuous Drain Id25

37A Tc

Transistor Element Material

SILICON

Pin Sayısı

3

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Power Dissipation Max

40.5W Tc

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Turn On Delay Time

17 ns

Avalanche Energy Rating Eas

740 mJ

Rds On Max Id Vgs

10.5m Ω @ 37A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Seri

OptiMOS™

Kılıf / Paket

TO-220-3 Full Pack

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

37A

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Parça Durumu

Active

Max Dual Supply Voltage

150V

Case Connection

ISOLATED

Fabrika Tedarik Süresi

13 Weeks

Power Dissipation

40.5W

Rise Time

20ns

Gate Charge Qg Max Vgs

55nC @ 10V

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Fet Type

N-Channel

ECCN Kodu

EAR99

Yayın Yılı

2008