IPA029N06NXKSA1

Teknik Özellikler

Fall Time Typ

11 ns

Drainsource On Resistancemax

0.0029Ohm

Yayın Yılı

2012

ECCN Kodu

EAR99

Fet Type

N-Channel

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

Gate Charge Qg Max Vgs

66nC @ 10V

Rise Time

15ns

Fabrika Tedarik Süresi

13 Weeks

Case Connection

ISOLATED

Max Dual Supply Voltage

60V

Parça Durumu

Active

Kurşunsuz

Lead Free

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-220-3 Full Pack

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

84A

Drive Voltage Max Rds On Min Rds On

6V 10V

Terminal Sayısı

3

Halogen Free

Halogen Free

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Through Hole

Number Of Elements

1

Input Capacitance Ciss Max Vds

5125pF @ 30V

Current Continuous Drain Id25

84A Tc

Transistor Element Material

SILICON

Pin Sayısı

3

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

30 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Vgsth Max Id

3.3V @ 75μA

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~175°C TJ

Seri

OptiMOS™

Rds On Max Id Vgs

2.9m Ω @ 84A, 10V