BUZ30AHXKSA1

Teknik Özellikler

Number Of Elements

1

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Vgs Max

±20V

Rise Time

70ns

Halogen Free

Halogen Free

Power Dissipation

125W

Kurşunsuz Kodu

yes

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Through Hole

Configuration

SINGLE

Power Dissipation Max

125W Tc

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED

Fet Type

N-Channel

Contact Plating

Tin

Pin Sayısı

3

Rds On Max Id Vgs

130m Ω @ 13.5A, 10V

Yayın Yılı

2005

Montaj

Through Hole

JESD-609 Kodu

e3

Max Dual Supply Voltage

200V

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Avalanche Energy Rating Eas

450 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Ambalaj

Tube

Parça Durumu

Last Time Buy

Kılıf / Paket

TO-220-3

Input Capacitance Ciss Max Vds

1900pF @ 25V

Continuous Drain Current Id

21A

Jedec95 Code

TO-220AB

Pulsed Drain Currentmax Idm

84A

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

SINGLE

Seri

SIPMOS®

Jesd30 Code

R-PSFM-T3