BSZ900N15NS3GATMA1

Teknik Özellikler

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

7nC @ 10V

Vgs Max

±20V

Turn On Delay Time

4 ns

Fet Type

N-Channel

Kurşunsuz Kodu

no

Rds On Max Id Vgs

90m Ω @ 10A, 10V

Current Continuous Drain Id25

13A Tc

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

8V 10V

Power Dissipation

38W

Continuous Drain Current Id

13A

Input Capacitance Ciss Max Vds

510pF @ 75V

Pulsed Drain Currentmax Idm

52A

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Turn Off Delay Time

8 ns

Jesd30 Code

S-PDSO-N5

Terminal Formu

NO LEAD

Case Connection

DRAIN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

30 mJ

Halogen Free

Halogen Free

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.09Ohm

Fall Time Typ

3 ns

Montaj

Surface Mount

Vgsth Max Id

4V @ 20μA

Seri

OptiMOS™

Montaj Tipi

Surface Mount

Number Of Elements

1

Power Dissipation Max

38W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

JESD-609 Kodu

e3

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE