BSZ12DN20NS3GATMA1

Teknik Özellikler

Pin Sayısı

8

Turn Off Delay Time

10 ns

Gate To Source Voltage Vgs

20V

Vgsth Max Id

4V @ 25μA

Fall Time Typ

3 ns

Transistor Application

SWITCHING

Current Continuous Drain Id25

11.3A Tc

Halogen Free

Halogen Free

Gate Charge Qg Max Vgs

8.7nC @ 10V

Terminal Formu

NO LEAD

Number Of Elements

1

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Drainsource On Resistancemax

0.125Ohm

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

5

Yayın Yılı

2011

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

S-PDSO-N5

REACH Uyumluluk Kodu

not_compliant

Kılıf / Paket

8-PowerTDFN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

60 mJ

Vgs Max

±20V

Pulsed Drain Currentmax Idm

45A

Kurşunsuz Kodu

no

Seri

OptiMOS™

Rds On Max Id Vgs

125m Ω @ 5.7A, 10V

JESD-609 Kodu

e3

Continuous Drain Current Id

11.3A

Qualification Status

Not Qualified

Input Capacitance Ciss Max Vds

680pF @ 100V

ECCN Kodu

EAR99

Pin Sayısı

8