BSZ123N08NS3GATMA1

Teknik Özellikler

Kılıf / Paket

8-PowerVDFN

Jesd30 Code

S-PDSO-N5

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Seri

OptiMOS™

Rds On Max Id Vgs

12.3m Ω @ 20A, 10V

Kurşunsuz Kodu

no

Continuous Drain Current Id

10A

JESD-609 Kodu

e3

Qualification Status

Not Qualified

Input Capacitance Ciss Max Vds

1700pF @ 40V

ECCN Kodu

EAR99

Pin Sayısı

8

Rise Time

18ns

Fabrika Tedarik Süresi

18 Weeks

Turn On Delay Time

12 ns

Max Dual Supply Voltage

80V

Drive Voltage Max Rds On Min Rds On

6V 10V

Parça Durumu

Active

Case Connection

DRAIN

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation Max

2.1W Ta 66W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

19 ns

Fall Time Typ

4 ns

Vgsth Max Id

3.5V @ 33μA

Transistor Application

SWITCHING

Current Continuous Drain Id25

10A Ta 40A Tc

Power Dissipation

66W

Halogen Free

Halogen Free

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

25nC @ 10V

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount