BSZ110N08NS5ATMA1

Teknik Özellikler

Transistor Element Material

SILICON

Drain To Source Breakdown Voltage

80V

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

9 ns

Fabrika Tedarik Süresi

18 Weeks

Drive Voltage Max Rds On Min Rds On

6V 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Max Dual Supply Voltage

80V

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

18.5nC @ 10V

Rise Time

3ns

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2013

Terminal Sayısı

3

Power Dissipation Max

50W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Pozisyonu

DUAL

Number Of Channels

1

Case Connection

DRAIN

Fet Type

N-Channel

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Surface Mount

Fall Time Typ

3 ns

Kurşunsuz Kodu

yes

Vgsth Max Id

3.8V @ 22μA

Rds On Max Id Vgs

11m Ω @ 20A, 10V

Seri

OptiMOS™

Turn Off Delay Time

15 ns

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

40A

Jesd30 Code

S-PDSO-N3

REACH Uyumluluk Kodu

not_compliant

Pin Sayısı

8

Kılıf / Paket

8-PowerTDFN

Avalanche Energy Rating Eas

40 mJ