BSZ110N06NS3GATMA1

Teknik Özellikler

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Number Of Elements

1

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

33nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

5

Yayın Yılı

2011

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Fall Time Typ

6 ns

Vgsth Max Id

4V @ 23μA

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

14 ns

Pin Sayısı

8

Power Dissipation

2.1W

Halogen Free

Halogen Free

Current Continuous Drain Id25

20A Tc

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Max Dual Supply Voltage

60V

Fabrika Tedarik Süresi

18 Weeks

Turn On Delay Time

10 ns

Rise Time

77ns

Power Dissipation Max

2.1W Ta 50W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Surface Mount

Case Connection

DRAIN

Parça Durumu

Active

Qualification Status

Not Qualified

Continuous Drain Current Id

20A

JESD-609 Kodu

e3

Seri

OptiMOS™