BSZ105N04NSGATMA1

Teknik Özellikler

Rise Time

1.2ns

Gate Charge Qg Max Vgs

17nC @ 10V

Number Of Elements

1

Turn On Delay Time

7 ns

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Max Dual Supply Voltage

40V

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Obsolete

Contact Plating

Tin

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Case Connection

DRAIN

Montaj

Surface Mount

Terminal Pozisyonu

DUAL

Power Dissipation Max

2.1W Ta 35W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2011

Terminal Sayısı

5

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

8-PowerTDFN

Pin Sayısı

8

Jesd30 Code

S-PDSO-N5

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Avalanche Energy Rating Eas

20 mJ

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

9.5 ns

Rds On Max Id Vgs

10.5m Ω @ 20A, 10V

Seri

OptiMOS™

Vgsth Max Id

4V @ 14μA

Kurşunsuz Kodu

no

Fall Time Typ

2.6 ns

Continuous Drain Current Id

11A

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

1300pF @ 20V