BSZ100N06LS3GATMA1

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

19 ns

Vgsth Max Id

2.2V @ 23μA

Pin Sayısı

8

Power Dissipation

2.1W

Halogen Free

Halogen Free

Current Continuous Drain Id25

11A Ta 20A Tc

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Contains Lead

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

45nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

5

Yayın Yılı

2011

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Continuous Drain Current Id

11A

JESD-609 Kodu

e3

Qualification Status

Not Qualified

Kurşunsuz Kodu

no

Seri

OptiMOS™

Rds On Max Id Vgs

10m Ω @ 20A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

55 mJ

Vgs Max

±20V

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

S-PDSO-N5

Kılıf / Paket

8-PowerVDFN

Drain Currentmax Abs Id

20A

Pin Sayısı

8

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

3500pF @ 30V

Max Dual Supply Voltage

60V