BSZ0909NSATMA1

Teknik Özellikler

Pin Sayısı

8

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

16 ns

Fall Time Typ

2 ns

Vgsth Max Id

2V @ 250μA

Transistor Application

SWITCHING

Halogen Free

Halogen Free

Current Continuous Drain Id25

9A Ta 36A Tc

Number Of Elements

1

Gate Charge Qg Max Vgs

17nC @ 10V

Terminal Formu

NO LEAD

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Terminal Kaplaması

Tin (Sn)

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

34V

Drainsource On Resistancemax

0.012Ohm

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

DUAL

Terminal Sayısı

5

Yayın Yılı

2013

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Avalanche Energy Rating Eas

9 mJ

Kılıf / Paket

8-PowerTDFN

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

S-PDSO-N5

Continuous Drain Current Id

36A

JESD-609 Kodu

e3

Qualification Status

Not Qualified

Rds On Max Id Vgs

12m Ω @ 20A, 10V

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

144A

Kurşunsuz Kodu

no

Input Capacitance Ciss Max Vds

1310pF @ 15V

Pin Sayısı

8