BSZ0904NSIATMA1

Teknik Özellikler

Pin Sayısı

8

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

16 ns

Fall Time Typ

3 ns

Vgsth Max Id

2V @ 250μA

Transistor Application

SWITCHING

Current Continuous Drain Id25

18A Ta 40A Tc

Halogen Free

Halogen Free

Power Dissipation

2.1W

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

11nC @ 4.5V

Number Of Elements

1

Fet Feature

Schottky Diode (Body)

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0057Ohm

Fet Type

N-Channel

Terminal Pozisyonu

DUAL

Yayın Yılı

2010

Terminal Sayısı

3

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

8-PowerTDFN

Jesd30 Code

R-PDSO-N3

REACH Uyumluluk Kodu

not_compliant

Drain Currentmax Abs Id

40A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Avalanche Energy Rating Eas

20 mJ

Seri

OptiMOS™

Rds On Max Id Vgs

4m Ω @ 30A, 10V

Kurşunsuz Kodu

no

JESD-609 Kodu

e3

Continuous Drain Current Id

18A

Input Capacitance Ciss Max Vds

1463pF @ 15V