BSZ0902NSIATMA1

Teknik Özellikler

Parça Durumu

Active

Contact Plating

Tin

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0037Ohm

Fet Type

N-Channel

Case Connection

DRAIN

Montaj

Surface Mount

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

2.5W Ta 48W Tc

Terminal Sayısı

3

Yayın Yılı

2011

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Rise Time

5.4ns

Gate Charge Qg Max Vgs

24nC @ 10V

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Max Dual Supply Voltage

30V

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Input Capacitance Ciss Max Vds

1500pF @ 15V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Current Continuous Drain Id25

21A Ta 40A Tc

Halogen Free

Halogen Free

Power Dissipation

2.5W

Pin Sayısı

8

Kılıf / Paket

8-PowerTDFN

Pin Sayısı

8

Jesd30 Code

S-PDSO-N3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Avalanche Energy Rating Eas

30 mJ

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

2.8m Ω @ 30A, 10V