BSZ068N06NSATMA1

Teknik Özellikler

Fet Type

N-Channel

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2012

Terminal Sayısı

3

Power Dissipation Max

2.1W Ta 46W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Pozisyonu

DUAL

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

21nC @ 10V

Rise Time

3ns

Number Of Elements

1

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Terminal Kaplaması

Tin (Sn)

Drive Voltage Max Rds On Min Rds On

6V 10V

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Max Dual Supply Voltage

60V

Input Capacitance Ciss Max Vds

1500pF @ 30V

Transistor Application

SWITCHING

Current Continuous Drain Id25

40A Tc

ECCN Kodu

EAR99

Halogen Free

Halogen Free

Jesd30 Code

S-PDSO-N3

REACH Uyumluluk Kodu

not_compliant

Pin Sayısı

8

Kılıf / Paket

8-PowerTDFN

Avalanche Energy Rating Eas

43 mJ

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

160A

Vgsth Max Id

3.3V @ 20μA

Seri

OptiMOS™

Rds On Max Id Vgs

6.8m Ω @ 20A, 10V