BSZ0589NSATMA1

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Ds Breakdown Voltagemin

30V

Drainsource On Resistancemax

0.0053Ohm

Fet Type

N-Channel

Case Connection

DRAIN

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

2.1W Ta

Terminal Sayısı

3

Yayın Yılı

2013

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

15nC @ 10V

Drain To Source Voltage Vdss

30V

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

950pF @ 15V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Current Continuous Drain Id25

17A Ta

Kılıf / Paket

8-PowerTDFN

Jesd30 Code

S-PDSO-N3

Drain Currentmax Abs Id

17A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Avalanche Energy Rating Eas

20 mJ

Yüzey Montaj

YES

Rds On Max Id Vgs

4.4m Ω @ 8A, 10V

Seri

OptiMOS™

Vgsth Max Id

2V @ 250μA

Pulsed Drain Currentmax Idm

68A